IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 3N120

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106

5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796

5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

V

0.2

0.4

0.6

0.8

1.0

0

1

2

3

4

5

Pulse Width - Seconds

0.00

0.01

0.10

1.00

V

0

5

10

15

20

25

30

35

40

10

100

1000

Gate Charge - nC

0

102030405060

0

2

4

6

8

10

12

Crss

Coss

Ciss

V

I

f = 1MHz

T

T

V

Single Pulse

Fig. 7 Gate Charge Characteristic Curve

Fig.8 Capacitance Curves

Fig. 9 Drain Current vs Drain to Source Voltage

Fig.10 Transient Thermal Impedance