BCP55 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

NPN medium power transistors

BCP54; BCP55; BCP56

THERMAL CHARACTERISTICS

Note

1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−−

100

IE = 0; VCB =30V; Tj = 125 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 5 mA; VCE =2V

−−

IC = 150 mA; VCE =2V

−

250

IC = 500 mA; VCE =2V

−−

hFE

DC current gain

IC = 150 mA; VCE =2V

−

BCP55-10; 56-10

−

160

BCP54-16; 55-16; 56-16

100

−

250

VCEsat

collector-emitter saturation voltage

IC = 0.5 A; IB =50mA

−−

500

VBE

base-emitter voltage

IC = 0.5 A; VCE =2V

−−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

−

130

−

MHz

DC current gain ratio of the

complementary pairs

IC = 150 mA; VCE =2V

−−

1.6

FE1

FE2

-----------

BCP55 Datasheet(PDF) 3 Page - NXP Semiconductors

BCP55 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL