Nexperia

BAV23C

Dual high-voltage switching diodes

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAV23C

SOT23

plastic, surface-mounted package; 3 terminals; 1.9 mm

pitch; 2.9 mm x 1.3 mm x 1 mm body

SOT23

7. Marking

Table 4. Marking codes

Type number

Marking code[1]

BAV23C

%V9

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VR

reverse voltage

-

200

V

VRRM

repetitive peak reverse

voltage

-

250

V

Single diode loaded

[1]

-

225

mA

IF

forward current

[2]

-

125

mA

IFRM

repetitive peak forward

current

-

625

mA

tp = 1 µs; square wave

[3]

-

9

A

tp = 100 µs; square wave

[3]

-

3

A

IFSM

non-repetitive peak

forward current

tp = 10 ms; square wave

[3]

-

1.7

A

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[4]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Single diode loaded.

[2] Double diode loaded.

[3] Tj = 25 °C prior to surge.

[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

BAV23C

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

1 April 2023

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