BF246B datasheet(3/5 Pages) PHILIPS

3 / 5 page

1996 Jul 29

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF246A; BF246B; BF246C;

BF247A; BF247B; BF247C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

STATIC CHARACTERISTICS

Tamb =25 °C; unless otherwise specified.

Note

1. Measured under pulse conditions: tp = 300 µs; δ≤ 0.02.

DYNAMIC CHARACTERISTICS

Tamb =25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−±25

gate current

−

Ptot

total power dissipation

up to Tamb =50 °C

−

400

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)GSS

gate-source breakdown voltage

IG = −1 µA; VDS =0

−25

−−

VGSoff

gate-source cut-off voltage

ID = 10 nA; VDS =15V

−0.6

−−14.5

VGS

gate-source voltage

ID = 200 µA; VDS =15V

BF246A; BF247A

−1.5

−−4.0

BF246B; BF247B

−3.0

−−7.0

BF246C; BF247C

−5.5

−−12.0

IDSS

drain current

VGS = 0; VDS = 15 V; note 1

BF246A; BF247A

−

BF246B; BF247B

−

140

BF246C; BF247C

110

−

250

IGSS

gate leakage current

VGS = −15 V; VDS =0

−−−5nA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Cis

input capacitance

ID = 10 mA; f = 1 MHz; VDS =15V

−

Crs

reverse transfer capacitance

ID = 10 mA; f = 1 MHz; VDS =15V

−

3.5

−

Cos

output capacitance

ID = 10 mA; f = 1 MHz; VDS =15V

−

y

fs

forward transfer admittance

ID = 10 mA; f = 1 kHz; VDS =15V

−

fgfs

cut-off frequency

gfs = 0.7 of its value at 1 kHz; VGS =0

−

450

−

MHz

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