TPCF8B01 datasheet(1/4 Pages) TOSHIBA

Part #	TPCF8B01

Description	TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode

PDF	4 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TPCF8B01

2003-04-08

1

TOSHIBA Multi-Chip Device

Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode

TPCF8B01

Notebook PC Applications

Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.)

• High forward transfer admittance: |Yfs| = 4.7 S (typ.)

• Low leakage current: IDSS = −10 ìA (max) (VDS = −20 V)

• Enhancement-model: Vth = −0.5 to −1.2 V(VDS =−10 V, ID = −200 ìA)

• Low forward voltage: VFM = 0.46V(typ.)

Maximum Ratings

MOSFET (Ta

= 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

−20

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−20

V

Gate-source voltage

VGSS

±8

V

DC

(Note 1)

ID

−2.7

Drain current

Pulse

(Note 1)

IDP

−10.8

A

Single pulse avalanche energy

(Note 4)

EAS

1.2

mJ

Avalanche current

IAR

−1.35

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR

0.11

mJ

SBD (Ta

= 25°C)

Characteristics

Symbol

Rating

Unit

Repetitive peak reverse voltage

VRRM

20

V

Average forward current (Note 2a, 6)

IF(AV)

1.0

A

Peak one cycle surge forward current

(non-repetitive)

IFSM

7(50Hz)

A

Maximum Ratings for MOSFET and SBD (Ta

= 25°C)

Characteristics

Symbol

Rating

Unit

Single-device operation

(Note 3a)

PD (1)

1.35

Drain power

dissipation

(t

= 5 s) (Note 2a) Single-device value at

dual operation (Note 3b)

PD (2)

1.12

Single-device operation

(Note 3a)

PD (1)

0.53

Drain power

dissipation

(t

= 5 s) (Note 2b) Single-device value at

dual operation (Note 3b)

PD (2)

0.33

W

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7), please refer to the next page.

Unit: mm

JEDEC

JEITA

TOSHIBA

Weight: 0.011 g (typ.)

Circuit Configuration

Marking (Note 7)

8

1

5

4

F8A

1. Anode

5. Drain

2. Anode

6. Drain

3.Source

7. Cathode

4. Gate

8. Cathode

1

2

3

4

8

7

6

5

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