N-Channel FREDFET

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

G

D

S

Single die FREDFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

oz

g

in·lbf

N·m

Ratings

29

18

120

±30

1875

16

Min

Typ

Max

1040

0.12

0.11

-55

150

300

0.22

6.2

10

1.1

Parameter

Continuous Drain Current @ T

Continuous Drain Current @ T

Gate-Source Voltage

Avalanche Current, Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

Mounting Torque ( TO-264 Package), 4-40 or M3 screw

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

T

T

L

W

T

Torque

TYPICAL APPLICATIONS

• ZVS phase shifted and other full full bridge

• Half bridge

• PFC and other boost converter

• Buck converter

• Single and two switch forward

• Flyback

FEATURES

• Fast switching with low EMI

• Low trr for high reliability

• Ultra low Crss for improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

TO-264

APT29F100B2

APT29F100L

1000V, 29A, 0.46Ω Max, trr ≤270ns

APT29F100B2

APT29F100L

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

Microsemi Website - http://www.microsemi.com