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BFC520 Datasheet(PDF) 7 Page - NXP Semiconductors

Part # BFC520
Description  NPN wideband cascode transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFC520 Datasheet(HTML) 7 Page - NXP Semiconductors

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1997 Sep 10
7
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
APPLICATION INFORMATION
SPICE parameters for any single BFC520 die
Note
1. These parameters have not been extracted, the
default values are shown.
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
1.016
fA
2
BF
220.1
−
3
NF
1.000
−
4
VAF
48.06
V
5
IKF
510.0
mA
6
ISE
283.0
fA
7
NE
2.035
−
8
BR
100.7
−
9
NR
0.988
−
10
VAR
1.692
V
11
IKR
2.352
mA
12
ISC
24.48
aA
13
NC
1.022
−
14
RB
10.00
Ω
15
IRB
1.000
µA
16
RBM
10.00
Ω
17
RE
775.3
m
Ω
18
RC
2.210
Ω
19(1)
XTB
0.000
−
20(1)
EG
1.110
eV
21(1)
XTI
3.000
−
22
CJE
1.245
pF
23
VJE
600.0
mV
24
MJE
0.258
−
25
TF
8.616
ps
26
XTF
6.788
−
27
VTF
1.414
V
28
ITF
110.3
mA
29
PTF
45.01
deg
30
CJC
447.6
fF
31
VJC
189.2
mV
32
MJC
0.071
−
33
XCJC
0.130
−
34
TR
543.7
ps
35(1)
CJS
0.000
F
36(1)
VJS
750.0
mV
37(1)
MJS
0.000
−
38
FC
0.780
−
Fig.10 Package equivalent circuit SOT353A
(inductance only).
handbook, halfpage
B2
C2
LP
LP
LP
E1
MBG216
LP
T2
T1
LB2
LE2
LE1
LP
LB1
B1
C1/E2
Fig.11 Package capacitance (fF) between
indicated nodes.
35
E1
B2
C2
C1/E2
B1
E1
B2
C2
MBG217
3.5
35
2
0.4
0.5
0.8
LP
Lead and mutual inductances (nH)
LB1,2
+0.4
+0.25
M(LB1,LE1)
M(LB1,LE2)
LE1,2
35
36
35
2
36
15



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