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BFG197/X Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BFG197/X
Description  NPN 7 GHz wideband transistor
PDF  13 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFG197/X Datasheet(HTML) 2 Page - NXP Semiconductors

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1995 Sep 13
2
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG197; BFG197/X;
BFG197/XR
FEATURES
• High power gain
• Low noise figure
• Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFG197 is a silicon NPN
transistor in a 4-pin, dual-emitter
plastic SOT143 envelope. It is
primarily intended for wideband
applications in the GHz range, such
as satellite TV systems and repeater
amplifiers in fibre-optic systems.
PINNING
PIN
DESCRIPTION
BFG197 (Fig.1) Code: V5
1
collector
2
base
3
emitter
4
emitter
BFG197/X (Fig.1) Code: V13
1
collector
2
emitter
3
base
4
emitter
BFG197A/XR (Fig.2) Code: V35
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT143.
handbook, 2 columns
Top view
MSB014
12
3
4
Fig.2 SOT143XR.
handbook, 2 columns
Top view
MSB035
1
2
4
3
QUICK REFERENCE DATA
Note
1. TS is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−
20
V
VCEO
collector-emitter voltage
open base
−−
10
V
IC
collector current
DC value
−−
100
mA
Ptot
total power dissipation
up to Ts =75 °C; note 1
−−
350
mW
Cre
feedback capacitance
IC =ic = 0; VCB = 8 V; f = 1 MHz
−
0.85
−
pF
fT
transition frequency
IC = 50 mA; VCE = 4 V; f = 2 GHz
−
7.5
−
GHz
GUM
maximum unilateral
power gain
IC = 50 mA; VCE =6V;
Tamb =25 °C; f = 1 GHz
−
16
−
dB
IC = 50 mA; VCE =6V;
Tamb =25 °C; f = 2 GHz
−
10
−
dB
F
noise figure
Γs = Γopt; IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
−
1.7
−
dB



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