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BFG197/X Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFG197/X Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 13 page ![]() 1995 Sep 13 2 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG197; BFG197/X; BFG197/XR FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. PINNING PIN DESCRIPTION BFG197 (Fig.1) Code: V5 1 collector 2 base 3 emitter 4 emitter BFG197/X (Fig.1) Code: V13 1 collector 2 emitter 3 base 4 emitter BFG197A/XR (Fig.2) Code: V35 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT143. handbook, 2 columns Top view MSB014 12 3 4 Fig.2 SOT143XR. handbook, 2 columns Top view MSB035 1 2 4 3 QUICK REFERENCE DATA Note 1. TS is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 10 V IC collector current DC value −− 100 mA Ptot total power dissipation up to Ts =75 °C; note 1 −− 350 mW Cre feedback capacitance IC =ic = 0; VCB = 8 V; f = 1 MHz − 0.85 − pF fT transition frequency IC = 50 mA; VCE = 4 V; f = 2 GHz − 7.5 − GHz GUM maximum unilateral power gain IC = 50 mA; VCE =6V; Tamb =25 °C; f = 1 GHz − 16 − dB IC = 50 mA; VCE =6V; Tamb =25 °C; f = 2 GHz − 10 − dB F noise figure Γs = Γopt; IC = 15 mA; VCE =8V; Tamb =25 °C; f = 1 GHz − 1.7 − dB |
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