BFG198 datasheet(2/12 Pages) PHILIPS

2 / 12 page

1995 Sep 12

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFG198

DESCRIPTION

NPN planar epitaxial transistor in a

plastic SOT223 envelope, intended

for wideband amplifier applications.

The device features a high gain and

excellent output voltage capabilities.

PINNING

DESCRIPTION

emitter

base

emitter

collector

Fig.1 SOT223.

age

123

MSB002 - 1

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage

open base

−−

DC collector current

−−

100

Ptot

total power dissipation

up to Ts = 135 °C (note 1)

−−

hFE

DC current gain

IC = 50 mA; VCE =5V; Tj =25 °C40

−

transition frequency

IC = 50 mA; VCE = 8 V; f = 1 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral power

gain

IC = 50 mA; VCE = 8 V; f = 500 MHz;

Tamb =25 °C

−

IC = 50 mA; VCE = 8 V; f = 800 MHz;

Tamb =25 °C

−

output voltage

dim = −60 dB; IC = 70 mA; VCE =8V;

RL =75 Ω; Tamb =25 °C;

f(p+q−r) = 793.25 MHz

−

700

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

DC collector current

−

100

Ptot

total power dissipation

up to Ts = 135 °C (note 1)

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

175

°C

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