BFG67 datasheet(2/16 Pages) PHILIPS

2 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistors

BFG67; BFG67/X; BFG67/XR

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

APPLICATIONS

Wideband applications in the GHz

range, such as satellite TV tuners and

portable RF communications

equipment.

DESCRIPTION

NPN silicon transistor in a 4-pin,

dual-emitter SOT143B plastic

package. Available with in-line emitter

pinning (BFG67) and cross emitter

pinning (BFG67/X). Version with

reverse pinning (BFG67/XR) also

available on request.

MARKING

TYPE NUMBER

CODE

BFG67 (Fig.1)

BFG67/X (Fig.1)

V12

BFG67/XR (Fig.2)

V26

PINNING

DESCRIPTION

BFG67

BFG67/X

BFG67/XR

collector

base

emitter

base

emitter

Fig.1

Simplified outline

SOT143B.

handbook, 2 columns

Top view

MSB014

Fig.2

Simplified outline

SOT143R.

handbook, 2 columns

Top view

MSB035

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCEO

collector-emitter voltage

open base

−

collector current (DC)

−

Ptot

total power dissipation

Ts ≤ 65 °C

−

300

Cre

feedback capacitance

IC =ic = 0; VCB = 8 V; f = 1 MHz

0.5

−

transition frequency

IC = 15 mA; VCE = 8 V; f = 500 MHz

−

GHz

GUM

maximum unilateral power

gain

IC = 15 mA; VCE =8V;

Tamb =25 °C; f = 1 GHz

−

noise ﬁgure

s = Γopt; IC = 5 mA; VCE =8V;

Tamb =25 °C; f = 1 GHz

1.3

−

Γs = Γopt; IC = 5 mA; VCE =8V;

Tamb =25 °C; f = 2 GHz

2.2

−

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