2

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = - 250 µA

- 19

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = - 250 µA

2.5

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.4

- 1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

- 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 5

On-State Drain Currentb

ID(on)

VDS ≤ - 5 V, VGS = - 4.5 V

- 10

A

Drain-Source On-State Resistanceb

RDS(on)

VGS = - 4.5 V, ID = - 3.1 A

0.083

Ω

VGS = - 2.5 V, ID = - 2.8 A

0.100

VGS = - 1.8 V, ID = - 2.5 A

0.130

Forward Transconductanceb

gfs

VDS = - 10 V, ID = - 3.1 A

9.5

S

Dynamica

Input Capacitance

Ciss

VDS = - 10 V, VGS = 0 V, f = 1 MHz

455

pF

Output Capacitance

Coss

70

Reverse Transfer Capacitance

Crss

54

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 5 V, ID = - 3.1 A

711

nC

VDS = - 10 V, VGS = - 4.5 V, ID = - 3.1 A

6.2

9.3

Gate-Source Charge

Qgs

0.85

Gate-Drain Charge

Qgd

1.75

Gate Resistance

Rg

f = 1 MHz

1.22

6.1

12.2

Ω

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 4.2 Ω

ID ≅ - 2.4 A, VGEN = - 8 V, Rg = 1 Ω

36

ns

Rise Time

tr

11

17

Turn-Off Delay Time

td(off)

21

32

Fall Time

tf

612

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 4.2 Ω

ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω

10

20

Rise Time

tr

32

48

Turn-Off Delay Time

td(off)

25

38

Fall Time

tf

612

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 2.6

A

Pulse Diode Forward Currenta

ISM

- 10

Body Diode Voltage

VSD

IS = - 2.4 A, VGS = 0 V

- 0.8

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 2.4 A, dI/dt = 100 A/µs, TJ = 25 °C

21

32

ns

Body Diode Reverse Recovery Charge

Qrr

13

20

nC

Reverse Recovery Fall Time

ta

17

ns

Reverse Recovery Rise Time

tb

4

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