N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET® power MOSFET

APPLICATIONS

•Load switches

- Notebook PC

Notes

a. Package limited, TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s

d. Maximum under steady state conditions is 95 °C/W.

e. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in

manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder

interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

VDS (V)

RDS(on) (

Ω)ID (A)

Qg (TYP.)

30

0.01

6 at VGS = 10 V

9

9 nC

0.0

19 at VGS = 4.5 V

8

Top View

1

3.0

mm

1

1

1

30

mm

Bottom View

2

D

3

D

4

G

1

D

D

7

D

6

S

5

D

8

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

9

A

TC = 70 °C

6 a

TA = 25 °C

6 a, b, c

TA = 70 °C

6 a, b, c

Pulsed Drain Current

IDM

30

Continuous Source-Drain Diode Current

TC = 25 °C

IS

5.2

TA = 25 °C

2.1 b, c

Maximum Power Dissipation

TC = 25 °C

PD

6.3

W

TC = 70 °C

4

TA = 25 °C

2.5 b, c

TA = 70 °C

1.6 b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Soldering Recommendations (Peak Temperature) e, f

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient a, c, d

t

≤ 5 s

RthJA

40

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

15

20

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1

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