BFQ17 datasheet(3/6 Pages) PHILIPS

3 / 6 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz wideband transistor

BFQ17

THERMAL RESISTANCE

Note

1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

Rth j-s

thermal resistance from junction to

soldering point

up to Ts = 145 °C (note 1)

30 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 20 V; Tj =50 °C

−−

µA

VCE sat

collector-emitter saturation voltage

IC = 100 mA; IB = 10 mA

−−

0.5

hFE

DC current gain

IC = 150 mA; VCE = 5 V

−

collector capacitance

IE = ie = 0; VCB = 15 V; f = 1 MHz

−−

4pF

Cre

feedback capacitance

IC = 10 mA; VCE = 15 V;

f = 1 MHz; Tamb = 25 °C

−

1.9

−

transition frequency

IC = 150 mA; VCE = 15 V;

f = 500 MHz

−

1.5

−

GHz

GUM

maximum unilateral power gain

(note 1)

IC = 60 mA; VCE = 15 V;

f = 200 MHz; Tamb = 25 °C

−

IC = 60 mA; VCE = 15 V;

f = 800 MHz; Tamb = 25 °C

−

6.5

−

–





–





--------------------------------------------------------------

dB.

log

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