BFQ67T datasheet(5/12 Pages) PHILIPS

5 / 12 page

2000 Mar 06

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67T

In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.

handbook, halfpage

MRC042

MSG

Gmax

gain

(dB)

IC (mA)

GUM

Fig.6 Gain as a function of collector current.

VCE = 8 V; f = 1 GHz; Tamb =25 °C.

handbook, halfpage

10−2

10−1

110

f (GHz)

MRC040

MSG

GUM

Gmax

gain

(dB)

Fig.7 Gain as a function of frequency.

IC = 5 mA; VCE = 8 V; Tamb =25 °C.

handbook, halfpage

MRC041

10−2

10−1

110

f (GHz)

MSG

GUM

Gmax

gain

(dB)

Fig.8 Gain as a function of frequency.

IC = 15 mA; VCE = 8 V; Tamb =25 °C.

handbook, halfpage

MRC043

10−2

10−1

110

f (GHz)

MSG

GUM

Gmax

gain

(dB)

Fig.9 Gain as a function of frequency.

IC = 30 mA; VCE = 8 V; Tamb =25 °C.

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