DMTH10H009LFG

Document number: DS42437 Rev. 3 - 2

2 of 7

www.diodes.com

December 2020

© Diodes Incorporated

DMTH10H009LFG

Maximum Ratings (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 5) VGS = 10V

TA = +25°C

TA = +100°C

ID

14

10

A

TC = +25°C

TC = +100°C

ID

55

39

A

Maximum Continuous Body Diode Forward Current (Note 5)

IS

30

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

220

A

Pulsed Body Diode Continuous Current (10µs Pulse, Duty Cycle = 1%)

ISM

220

A

Avalanche Current (L = 1mH)

IAS

17

A

Avalanche Energy (L = 1mH)

EAS

144.5

mJ

Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

2.5

W

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

60

°C/W

Total Power Dissipation

TC = +25°C

PD

39

W

Thermal Resistance, Junction to Case

RθJC

3.8

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

BVDSS

100

—

—

V

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 80V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

VGS(TH)

1.1

—

2.5

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

6.4

8.5

mΩ

VGS = 10V, ID = 20A

—

8.2

12.5

VGS = 4.5V, ID = 10A

Diode Forward Voltage

VSD

—

0.8

1.2

V

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Ciss

—

2361

—

pF

VDS = 50V, VGS = 0V

f = 1MHz

Output Capacitance

Coss

—

611

—

Reverse Transfer Capacitance

Crss

—

16

—

Gate Resistance

Rg

—

1.7

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

Qg

—

41

—

nC

VDD = 50V, ID = 13A,

VGS = 10V

Gate-Source Charge

Qgs

—

7.3

—

Gate-Drain Charge

Qgd

—

9.3

—

Turn-On Delay Time

tD(ON)

—

7

—

ns

VDD = 50V, VGS = 10V,

ID = 13A, Rg = 6Ω

Turn-On Rise Time

tR

—

12

—

Turn-Off Delay Time

tD(OFF)

—

42

—

Turn-Off Fall Time

tF

—

24

—

Reverse Recovery Time

tRR

—

45

—

ns

IF = 13A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

68

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.