BFS17A datasheet(3/6 Pages) PHILIPS

3 / 6 page

September1995

Philips Semiconductors

Product speciﬁcation

NPN 3 GHz wideband transistor

BFS17A

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

dB.

2. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL =75 Ω; Tamb =25 °C;

Vp =VO; fp = 795.25 MHz;

Vq =VO −6 dB; fq = 803.25 MHz;

Vr =VO −6 dB; fr = 805.25 MHz;

measured at f(p+q−r) = 793.25 MHz.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

up to Ts =70 °C; note 1

260

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =10V

−−

hFE

DC current gain

IC = 2 mA; VCE =1V; Tamb =25 °C25

−

IC = 25 mA; VCE =1V; Tamb =25 °C25

−

transition frequency

IC = 25 mA; VCE = 5 V; f = 500 MHz;

Tamb =25 °C

−

2.8

−

GHz

collector capacitance

IE = 0; VCB = 10 V; f = 1 MHz;

Tamb =25 °C

−

0.7

−

emitter capacitance

IC = 0; VEB = 0.5 V; f = 1 MHz

−

1.25

−

Cre

feedback capacitance

IC = 0; VCE =5V; f=1MHz

−

0.6

−

GUM

maximum unilateral power gain

note 1

IC = 14 mA; VCE = 10 V; f = 800 MHz −

13.5

−

noise ﬁgure

IC = 2 mA; VCE =5V; ZS =60 Ω;

f = 800 MHz; Tamb =25 °C

−

2.5

−

output voltage

note 2

−

150

−

10 log

–





–





--------------------------------------------------------------

BFS17A Datasheet(PDF) 3 Page - NXP Semiconductors

BFS17A Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL