IXTP05N100 datasheet(1/4 Pages) IXYS

Part #	IXTP05N100

Description	High Voltage MOSFET

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

1000

V

GS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C

750

mA

I

DM

T

C = 25°C, pulse width limited by TJM

3A

I

AR

1.0

A

E

AR

T

C = 25°C5

mJ

E

AS

T

C = 25°C

100

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

3

V/ns

T

J ≤ 150°C, RG = 47 Ω

P

D

T

C = 25°C40

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

4

g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

High Voltage MOSFET

G = Gate,

D = Drain,

S = Source,

TAB = Drain

D (TAB)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 250 µA

1000

V

GS(th)

V

DS = VGS, ID = 25 µA

2.5

4.5

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

T

J = 25°C25

µA

V

GS = 0 V

T

J = 125°C

500

µA

R

DS(on)

V

GS = 10 V, ID = 375 mA

15

17

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Features

International standard packages

High voltage, Low R

DS (on) HDMOS

TM

process

Rugged polysilicon gate cell structure

Fast switching times

Applications

Switch-mode and resonant-mode

power supplies

Flyback inverters

DC choppers

High frequency matching

Advantages

Space savings

High power density

DS98736B(10/04)

G D

S

TO-220AB (IXTP)

G

S

TO-263 AA (IXTA)

D (TAB)

N-Channel Enhancement Mode

Avalanche Energy Rated

IXTA 05N100

IXTP 05N100

V

DSS

= 1000 V

I

D25

= 750 mA

R

DS(on)

=

17

Ω

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IXTP05N100 Datasheet(PDF) 1 Page - IXYS Corporation

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