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THAT140 Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers |
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THAT140 Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers |
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3 / 4 page  Page 3 THAT140 Transistor Array THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com Electrical Characteristics2 Parameter Symbol Conditions Min Typ Max Units NPN Current Gain hfe VCB =10V IC =1mA 60 100 ¾ IC =10 mA 60 100 ¾ NPN Current Gain Matching Dhfe VCB =10V,IC =1mA — 5 — % NPN Noise Voltage Density eN VCB =10V,IC = 1 mA, 1 kHz — 0.8 — nV / Hz NPN Gain-Bandwidth Product ft IC = 1 mA, VCB = 10 V 350 MHz NPN DVBE (VBE1-VBE2)VOS IC =1mA — ±0.5 ±3mV IC =10 mA— ±0.5 ±3mV NPN DIB (IB1-IB2)IOS IC =1mA — ±500 ±1500 nA IC =10 mA— ±5 ±15 nA NPN Collector-Base Leakage Current ICBO VCB =25V — 25 — pA NPN Bulk Resistance rBE VCB =0V,10mA<IC < 10mA — 2 — W NPN Base Spreading Resistance rbb VCB =10V,IC = 1mA —30— W NPN Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100 mA — 0.05 V NPN Output Capacitance COB VCB =10V,IE = 0 mA, 100 kHz 3 pF NPN Collector-Collector Capacitance (Q1-Q2)CCC VCC = 0 V, 100 kHz 0.7 pF PNP Current Gain hfe VCB =10V IC =1mA 50 75 ¾ IC =10 mA50 75 ¾ PNP Current Gain Matching Dhfe VCB =10V,IC =1mA — 5 — % PNP Noise Voltage Density eN VCB =10V,IC = 1 mA, 1 kHz — 0.75 — nV / Hz PNP Gain-Bandwidth Product ft IC = 1 mA, VCB = 10 V 325 MHz PNP DVBE (VBE3-VBE4)VOS IC =1mA — ±0.5 ±3mV IC =10 mA— ±0.5 ±3mV PNP DIB (IB3-IB4)IOS IC =1mA — ±700 ±1800 nA IC =10 mA— ±7 ±18 nA PNP Collector-Base Leakage Current ICBO VCB =25V — -25 — pA PNP Bulk Resistance rBE VCB =0V,10mA<IC < 10mA — 2 — W PNP Base Spreading Resistance rbb VCB =10V,IC = 1mA —25— W PNP Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100 mA — -0.05 V PNP Output Capacitance COB VCB =10V,IE = 0 mA, 100 kHz 3 pF PNP Collector-Collector Capacitance (Q3-Q4)CCC VCC = 0 V, 100 kHz 0.6 pF 1. All specifications subject to change without notice. 2. Unless otherwise noted, TA=25°C. |
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