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2SC2881 Datasheet(PDF) 2 Page - Nanjing International Group Co |
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2SC2881 Datasheet(HTML) 2 Page - Nanjing International Group Co |
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2 / 4 page ![]() NPN Silicon Epitaxial Planar Transistor 2SC2881 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=120V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=100mA 80 240 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 1 V Base-emitter voltage VBE VCE=5V, IB=500mA 1 V Transition frequency fT VCE=5V,Ic=100mA 120 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 30 pF CLASSIFICATION OF hFE Rank O Y Range 80-160 120-240 MARKING CO1 CY1 www.dgnjdz.com www.dgnjdz.com |
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