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IRGMC50F Datasheet(PDF) 2 Page - International Rectifier

Part # IRGMC50F
Description  INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRGMC50F Datasheet(HTML) 2 Page - International Rectifier

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IRGMC50F
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
–––
120
140
IC = 30A
Qge
Gate - Emitter Charge (turn-on)
–––
15
35
nC
VCC = 300V
See Fig. 8
Qgc
Gate - Collector Charge (turn-on)
–––
35
70
VGE = 15V
td(on)
Turn-On Delay Time
–––
–––
48
IC = 30A, VCC = 480V
tr
Rise Time
–––
–––
100
VGE = 15V, RG = 2.35
Ω
td(off)
Turn-Off Delay Time
–––
–––
540
Energy losses include "tail"
tf
Fall Time
–––
–––
360
See Fig. 9, 10 & 13
Eon
Turn-On Switching Loss
–––
0.2
–––
Eoff
Turn-off Switching Loss
–––
5.8
–––
Ets
Total Switching Loss
–––
6.0
10
td(on)
Turn-On Delay Time
–––
25
–––
TJ = 125°C
tr
Rise Time
–––
49
–––
IC = 30A, VCC = 480V
td(off)
Turn-Off Delay Time
–––
440
–––
VGE = 15V, RG = 2.35
Ω
tf
Fall Time
–––
410
–––
Energy losses include "tail"
Ets
Total Switching Loss
–––
10
–––
See Fig. 11, 13
LC+LE
Total Inductance
–––
6.8
–––
nH
Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
Cies
Input Capacitance
––– 3000 –––
VGE = 0V
Coes
Output Capacitance
–––
340
–––
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
–––
40
–––
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
–––
–––
V
VGE = 0V, IC = 1.0 mA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
15
–––
–––
V
VGE = 0V, IC = 1.0 A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.62 –––
V/°CVGE = 0V, IC = 1.0 mA
–––
–––
1.7
IC = 30A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
–––
2.0
–––
IC = 35A
See Fig.5
–––
1.7
–––
IC = 30A , TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0
–––
5.5
VCE = VGE, IC = 250 µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
–––
-14
–––
mV/°CVCE = VGE, IC = 250 µA
gfe
Forward Transconductance
T
21
–––
–––
SVCE
≥ 15V, IC = 30A
–––
–––
50
VGE = 0V, VCE = 480V
–––
–––
2000
VGE = 0V, VCE = 480V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
–––
–––
±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES
Zero Gate Voltage Collector Current
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
V
➂
➂
➂
➂
➂
ns
mJ
ns
mJ
For footnotes refer to the last page
Note: Corresponding Spice and Saber models are available on the Website.



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