BCP52 datasheet(2/2 Pages) DGNJDZ

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SMD Type

Transistors

BCP51,BCP52,BCP53

(KCP51,KCP52,KCP53)

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Electrical Characteristics Ta = 25℃

Symbol

Test Conditions

Min

Typ

Max

Unit

BCP51

-45

BCP52

-60

BCP53

-100

BCP51

-45

BCP52

-60

BCP53

-80

VEBO

IE= -100μA， IC= 0

-5

BCP51

VCB= -45 V , IE= 0

BCP52

VCB= -60 V , IE= 0

BCP53

VCB= -100 V , IE= 0

IEBO

VEB= -5V , IC=0

-0.1

VCE(sat) IC=-500 mA, IB=-50mA

-0.5

VBE(sat) IC=-500 mA, IB=-50mA

-1.2

VBE

VCE= -2V, IC= -500mA

-1

hFE(1)

VCE= -2V, IC= -5mA

hFE(2)

VCE= -2V, IC= -150mA

250

hFE(3)

VCE= -2V, IC= -500mA

VCE= -10V, IC= -50mA,f=100MHz

100

MHz

Transition frequency

Base - emitter saturation voltage

DC current gain

Base-emitter voltage

ICBO

-0.1

Emitter cut-off current

Collector-emitter saturation voltage

Parameter

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE= 0

Collector- emitter breakdown voltage

VCEO

Ic= -10 mA， IB= 0

Emitter - base breakdown voltage

Collector-base cut-off current

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Classification of hfe(2)

TypE

BCP51-10,BCP52-10,BCP53-10

BCP51-16,BCP52-16,BCP53-16

Range

63-160

100-250

BCP52 Datasheet(PDF) 2 Page - Nanjing International Group Co

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