BCP54 datasheet(1/4 Pages) DGNJDZ

Part #	BCP54

Description	SOT-223 Plastic-Encapsulate Transistors

PDF	4 Pages

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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SOT-223 Plastic-Encapsulate Transistors

BCP54,55,56

TRANSISTOR (NPN)

FEATURES

For AF driver and output stages

High collector current

Low collector-emitter saturation voltage

Complementary types: BCP51 ... BCP53 (PNP)

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

BCP54

BCP55

BCP56

Unit

VCBO

Collector-Base Voltage

45

60

100

V

VCEO

Collector-Emitter Voltage

45

60

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

1

A

PC

Collector Power Dissipation

1.5

W

RθJA

Thermal Resistance Junction to Ambient

83.3

℃

/W

Tstg

Storage Temperature Range

-65

~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

BCP54

BCP55

BCP56

V(BR)CBO

IC= 0.1mA,IE=0

45

60

100

V

Collector-emitter breakdown voltage

BCP54

BCP55

BCP56

V(BR)CEO

IC= 10mA,IB=0

45

60

80

V

Base-emitter breakdown voltage

V(BR)EBO

IE= 10μA,IC=0

5

V

Collector cut-off current

ICBO

VCB= 30 V, IE=0

100

nA

hFE(1)

VCE= 2V, IC=5mA

25

hFE(2)

VCE= 2V, IC=150m A

63

250

DC current gain

hFE(3)

VCE= 2V, IC=500m A

25

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=50mA

0.5

V

Base-emitter voltage

VBE

VCE=2V, IC=500m A

1

V

Transition frequency

fT

VCE=10V,IC=50mA,f=100MHz

100

MHz

CLASSIFICATION OF hFE(2)

Rank

BCP54-10, BCP55-10, BCP56-10

BCP54-16, BCP55-16, BCP56-16

Range

63-160

100-250

SOT-223

1. BASE

2. COLLECTOR

3. EMITTER

1

Marking

BCP54-10, BCP55-10, BCP56-10

BCP54-16, BCP55-16, BCP56-16

G,Jan,2017

www.dgnjdz.com

DONGGUAN NANJING ELECTRONICS LTD.,

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