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AM29LV641MH Datasheet(PDF) 52 Page - SPANSION |
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AM29LV641MH Datasheet(HTML) 52 Page - SPANSION |
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52 / 60 page  50 Am29LV641MH/L December 21, 2005 DA TA SH EET AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 3. For 1–16 words programmed. 4. Effective write buffer specification is based upon a 16-word write buffer operation. 5. Word programming specification is based upon a single word programming operation not utilizing the write buffer. 6. AC Specifications listed are tested with V IO = VCC. Contact AMD for information on AC operation with VIO ≠ VCC. 7. When using the program suspend/resume feature, if the suspend command is issued within t POLL, tPOLL must be fully re-applied upon resuming the programming operation. If the suspend command is issued after t POLL, tPOLL is not required again prior to reading the status bits upon resuming. Parameter Speed Options JEDEC Std. Description 90R 101, 101R 112, 112R 120, 120R Unit t AVAV t WC Write Cycle Time (Note 1) Min 90 100 110 120 ns t AVWL t AS Address Setup Time Min 0 ns t ELAX t AH Address Hold Time Min 45 ns t DVEH t DS Data Setup Time Min 45 ns t EHDX t DH Data Hold Time Min 0 ns t GHEL t GHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t WLEL t WS WE# Setup Time Min 0 ns t EHWH t WH WE# Hold Time Min 0 ns t ELEH t CP CE# Pulse Width Min 45 ns t EHEL t CPH CE# Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 352 µs Effective Word Program Time, using the Write Buffer (Notes 2, 4) Typ 22 µs Effective Accelerated Word Program Time, using the Write Buffer (Notes 2, 4) Typ 17.6 µs Single Word Program Operation (Note 2, 5) Typ 100 µs Accelerated Single Word Programming Operation (Note 2, 5) Typ 90 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec t RH Reset High Time Before Write (Note 1) Min 50 ns t POLL Program Valid Before Status Polling (Note 7) Max 4 µs |
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