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GLT6400L08LL-85ST Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers |
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GLT6400L08LL-85ST Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers |
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3 / 10 page ![]() G -LINK GLT6400L08 Ultra Low Power 512k x 8 CMOS SRAM Feb 2001(Rev. 1.1) G-Link Technology Corporation 2701 Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 6F No. 24-2, Industry E. RD. IV, Science Based Industrial Park, Hsin Chu, Taiwan. - 3 - Absolute Maximum Ratings* Parameter Symbol Minimum Maximum Unit Voltage on Any Pin Relative to Gnd Vt -0.5 Vcc+0.3 V Power Dissipation PT - 1.0 W Storage Temperature (Plastic) Tstg -55 +150 °C Temperature Under Bias Tbias -40 +85 °C *Note : Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Recommended Operating Conditions Parameter Symbol Min Typ Max Unit VCC 2.7 3 3.3 V Supply Voltage Gnd 0.0 0.0 0.0 V VIH 2.0 - VCC+0.2 V Input Voltage VIL -0.5* - 0.6 V * VIL min = -1.0V for pulse width less than tRC/2. |
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