STD10P6F6 datasheet(4/24 Pages) STMICROELECTRONICS

Part #	STD10P6F6

Description	P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

PDF	24 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

4 / 24 page

Electrical characteristics

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6

4/24

DocID022967 Rev 5

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = -250 µA, VGS= 0 V

-60

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = -60 V

-1

µA

VDS = -60 V, Tc = 125 °C

-10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = -250 µA

-2

-4

RDS(on)

Static drain-source on-

resistance

VGS = -10 V, ID = -5 A

0.13

0.16

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = -48 V, f=1 MHz,

VGS = 0 V

-340

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-20

Total gate charge

VDD = -30 V, ID = -10 A

VGS = -10 V

(see Figure 16)

-6.4

Qgs

Gate-source charge

1.7

Qgd

Gate-drain charge

1.7

Table 6. Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = -48 V, ID = -5 A,

RG = 4.7 Ω, VGS = -10 V

(see Figure 15)

-64

Rise time

5.3

td(off)

Turn-off delay time

Fall time

3.7

STD10P6F6 Datasheet(PDF) 4 Page - STMicroelectronics

STD10P6F6 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

Datasheet Download

Link URL