BLF147 datasheet(7/12 Pages) PHILIPS

7 / 12 page

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF147

Fig.11 Third order intermodulation distortion as a

function of load power, typical values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

−20

−30

−40

−50

−60

100

200

MGP055

(dB)

PL (W) PEP

Fig.12 Fifth order intermodulation distortion as a

function of load power, typical values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

−20

−30

−40

−60

−50

100

200

MGP056

(dB)

PL (W) PEP

Fig.13 Test circuit for class-AB operation.

f = 28 MHz.

handbook, full pagewidth

MGP057

input

Ω

D.U.T.

+VG

C13

C11

C10

C12

C15

+VD

C14

output

Ω

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