September 1992

3

Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF248

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Per transistor section unless otherwise specified.

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

±V

GS

gate-source voltage

−

20

V

DC drain current

−

25

A

total power dissipation

both sections equally loaded

−

500

W

storage temperature

−65

150

°C

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

thermal resistance from

junction to mounting base

total device; both sections

equally loaded.

0.35 K/W

thermal resistance from

mounting base to heatsink

total device; both sections

equally loaded.

0.15 K/W

Fig.2 DC SOAR.

Total device; both sections equally loaded.

handbook, halfpage

1

10

110

VDS (V)

ID

(A)

(1)

MRA933

(2)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

Total device; both sections equally loaded.

handbook, halfpage

0

50

100

150

600

0

200

400

MGP203

Th (°C)

Ptot

(W)

(2)

(1)