BLF276 datasheet(4/13 Pages) PHILIPS

4 / 13 page

December 1997

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF276

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = 30 mA

110

−−

IDSS

drain-source leakage current

VGS = 0; VDS = 50 V

−−

1mA

IGSS

gate-source leakage current

±VGS = 20 V; VDS = 0

−−

µA

VGS(th)

gate-source threshold voltage

ID = 50 mA; VDS = 10 V

−

4.5

gfs

forward transconductance

ID = 3 A; VDS = 10 V

2.7

−−

RDS(on)

drain-source on-state resistance

ID = 3 A; VGS = 10 V

−

0.4

0.6

Ω

IDSX

on-state drain current

VGS = 10 V; VDS = 10 V

−

Cis

input capacitance

VGS = 0; VDS = 50 V; f = 1 MHz

−

240

−

Cos

output capacitance

VGS = 0; VDS = 50 V; f = 1 MHz

−

Crs

feedback capacitance

VGS = 0; VDS = 50 V; f = 1 MHz

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

VDS = 10 V.

handbook, halfpage

−1

−2

−3

−4

−5

10−1

10−2

ID (A)

(mV/K)

MRA945

Fig.5

Drain current as a function of gate-source

voltage, typical values.

VDS = 10 V.

handbook, halfpage

(A)

VGS (V)

MRA940

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