BLF368 datasheet(4/16 Pages) PHILIPS

4 / 16 page

1998 Jul 29

Philips Semiconductors

Product speciﬁcation

VHF push-pull power MOS transistor

BLF368

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor section

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = 100 mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS =32V

−−

5mA

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−

µA

VGSth

gate-source threshold voltage

ID = 100 mA; VDS =10V

−

4.5

∆V

gate-source voltage difference of

both transistor sections

ID = 100 mA; VDS =10V

−−

100

gfs

forward transconductance

ID = 8 A; VDS = 10 V

7.5

−

gfs1/gfs2

forward transconductance ratio

of both transistor sections

ID = 8 A; VDS = 10 V

0.9

−

1.1

RDSon

drain-source on-state resistance

ID = 8 A; VDS =10V

−

0.1

0.15

Ω

IDSX

on-state drain current

VGS = 10 V; VDS =10V

−

Cis

input capacitance

VGS = 0; VDS =32V; f=1MHz

−

495

−

Cos

output capacitance

VGS = 0; VDS =32V; f=1MHz

−

340

−

Crs

feedback capacitance

VGS = 0; VDS =32V; f=1MHz

−

Cd-f

drain-ﬂange capacitance

−

5.4

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current; typical

values per section.

VDS =10V.

handbook, halfpage

−5

MGP229

10−1

110

−4

−3

−2

−1

ID (A)

T.C.

(mV/K)

Fig.5

Drain current as a function of gate-source

voltage; typical values per section.

VDS = 10 V; Tj =25 °C.

handbook, halfpage

MGP230

(A)

VGS (V)

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