October 1992

2

Philips Semiconductors

Product specification

UHF push-pull power MOS transistor

BLF547

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability

• Designed for broadband operation.

DESCRIPTION

Dual push-pull silicon N-channel

enhancement mode vertical D-MOS

transistor designed for

communications transmitter

applications in the UHF frequency

range.

The transistor is encapsulated in a

4-lead, SOT262A2 balanced flange

envelope, with two ceramic caps. The

mounting flange provides the

common source connection for the

transistors.

PINNING - SOT262A2

PIN

DESCRIPTION

1

drain 1

2

drain 2

3

gate 1

4

gate 2

5

source

PIN CONFIGURATION

CAUTION

The device is supplied in an antistatic package. The gate-source input must

be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO discs are not damaged. All persons who handle, use or dispose

of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

Fig.1 Simplified outline and symbol.

halfpage

12

34

MSB008

Top view

55

MBB157

g2

g1

d2

d1

s

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B

500

28

100

> 10

> 50