Wuxi NCE Power Co., Ltd

Page

V4.0

2

NCE6012AS

http://www.ncepower.com

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

60

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.9

1.3

1.8

V

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=12A

-

6.5

8

mΩ

VGS=4.5V, ID=6A

-

7.5

9

mΩ

Forward Transconductance

gFS

VDS=5V,ID=12A

40

-

-

S

Dynamic Characteristics (Note4)

Input Capacitance

Clss

VDS=30V,VGS=0V,

F=1.0MHz

-

4100

-

PF

Output Capacitance

Coss

-

298

-

PF

Reverse Transfer Capacitance

Crss

-

229

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

VDD=30V, RL=1Ω

VGS=10V,RGEN=3Ω

-

8.5

-

nS

Turn-on Rise Time

tr

-

7

-

nS

Turn-Off Delay Time

td(off)

-

40

-

nS

Turn-Off Fall Time

tf

-

15

-

nS

Total Gate Charge

Qg

VDS=30V,ID=12A,

VGS=10V

-

93

-

nC

Gate-Source Charge

Qgs

-

9.7

-

nC

Gate-Drain Charge

Qgd

-

20

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=12A

-

-

1.2

V

Diode Forward Current (Note 2)

IS

-

-

12

A

Reverse Recovery Time

trr

TJ = 25°C, IF=12A

di/dt = 100A/μs(Note3)

-

32

-

nS

Reverse Recovery Charge

Qrr

-

45

-

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. The value of

RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production