1999 Aug 26

2

Philips Semiconductors

Preliminary specification

UHF power LDMOS transistor

BLF861

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (UHF band).

APPLICATIONS

• Communication transmitter applications in the UHF

frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS

push-pull transistor in an SOT540A package with ceramic

cap. The common source is connected to the mounting

flange.

PINNING - SOT540A

PIN

DESCRIPTION

1drain 1

2drain 2

3gate 1

4gate 2

5

source, connected to flange

Fig.1 Simplified outline.

5

12

4

3

Top view

MBK777

QUICK REFERENCE DATA

°C in a common source test circuit.

Notes

1.

Sync compression: input sync:

≥33%; output sync: 27 %

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

(dB)

CW, class-AB

860

32

150

>14

>50

≤1

PAL BG (TV), class-AB

860

(ch 69)

32

typ.170

(peak sync)

>14

>40

note 1

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

gate-source voltage

−±15

V

drain current (DC)

−

18

A

total power dissipation

−

318

W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.