High Power GaAs SPDT Switch

DC - 2.0 GHz

MASWSS0161

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V3

2

RoHS

Compliant

Electrical Specifications

Parameter

Test Conditions

Units

Min.

Typ.

8

Max.

Insertion Loss

DC - 0.5 GHz

0.5 - 1.0 GHz

1.0 - 2.0 GHz

dB

dB

dB

—

—

—

0.45

0.55

0.6

—

0.65

—

Isolation

DC - 0.5 GHz

0.5 - 1.0 GHz

1.0 - 2.0 GHz

dB

dB

dB

—

27

—

30

32

27

—

—

—

VSWR

DC - 2.0 GHz

Ratio

—

1.2:1

—

1 dB Compression

Input Power (5 V Supply/Control) 0.9 GHz

Input Power (8 V Supply/Control) 0.9 GHz

dBm

dBm

—

—

33

35.8

—

—

Trise, Tfall

10% to 90% RF, 90% to 10% RF

nS

—

30

—

Ton, Toff

50% Control to 90% RF, 50% Control to 10% RF

nS

—

35

—

Transients

In-Band

mV

—

12

—

3rd Order Intercept

Measured Relative to Input Power, two-tone up to +10 dBm

(5 V Supply/Control) 0.9 GHz

(8 V Supply/Control) 0.9 GHz

dBm

dBm

—

—

55

65

—

—

Control Current

µA

—

—

20

Supply Current

µA

—

—

60

7.

ports, unless otherwise specified. High power (greater than 1 W) handling specifications apply to cold switching only. For input powers

under 1 W, hot switching can be used. The high control voltage must be within ± 0.2 V of the supply voltage. External DC blocking

capacitors are required on all RF ports.

8.

Typical values listed for middle of frequency range noted.

Lead-Free SOIC-8

†

†

Reference Application Note M538 for lead-free solder reflow recommendations.