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DMC3026LSD Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMC3026LSD
Description  DMC3026LSD
PDF  9 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMC3026LSD Datasheet(HTML) 3 Page - Diodes Incorporated

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DMC3026LSD
Document number: DS36936 Rev.1 - 2
3 of 9
www.diodes.com
July 2014
© Diodes Incorporated
DMC3026LSD
Electrical Characteristics – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-30
⎯
⎯
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-1
µ
A
VDS = -24V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-1
⎯
-3
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
⎯
21
28
m
Ω
VGS = -10V, ID = -6A
⎯
29
38
VGS = -4.5V, ID = -5A
Diode Forward Voltage
VSD
⎯
-0.7
-1.2
V
VGS = 0V, IS = -1.3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
⎯
1241
⎯
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
146
⎯
Reverse Transfer Capacitance
Crss
⎯
110
⎯
Gate Resistance
RG
⎯
14.8
⎯
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Qg
⎯
10.9
⎯
nC
VDS = -15V, ID = -7A
Total Gate Charge (VGS = -10V)
Qg
⎯
22
⎯
Gate-Source Charge
Qgs
⎯
3.5
⎯
Gate-Drain Charge
Qgd
⎯
4.7
⎯
Turn-On Delay Time
tD(on)
⎯
9.7
⎯
nS
VGS = -10V, VDD = -15V, RGEN = 6Ω,
ID = -7A
Turn-On Rise Time
tr
⎯
17.1
⎯
Turn-Off Delay Time
tD(off)
⎯
60.5
⎯
Turn-Off Fall Time
tf
⎯
40.4
⎯
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.



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