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HS9-139RH/PROTO Datasheet(PDF) 3 Page - Renesas Technology Corp |
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HS9-139RH/PROTO Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 6 page  HS-139RH, HS-139EH FN3573 Rev 6.00 Page 3 of 6 August 8, 2013 Die Characteristics DIE DIMENSIONS: 3750µm x 2820µm (148 mils x 111 mils) 483µm ±25.4µm (19 mils ±1 mil) INTERFACE MATERIALS: Glassivation: Type: Silox (SiO2) Thickness: 8.0kÅ ±1.0kÅ Top Metallization: Type: AlSiCu Thickness: 16.0kÅ ±2kÅ Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 49 Metallization Mask Layout HS-139RH, HS-139EH GND +IN4 -IN4 V+ -IN1 +IN1 +IN3 -IN3 +IN2 -IN2 OUT4 OUT3 OUT2 OUT1 (9) (8) (7) (6) (5) (4) (3) (2) (1) (14) (13) (12) (11) (10) |
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