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PCFF60H120SWF Datasheet(PDF) 1 Page - ON Semiconductor |
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PCFF60H120SWF Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 4 page ![]() DIE DATA SHEET www.onsemi.com Semiconductor Components Industries, LLC, 2023 May, 2023 − Rev. 0 1 Publication Order Number: PCFF60H120SWF−DIE/D Diode - Power, Bare Die Gen VII, Fast Recovery 1200 V, 60 A PCFF60H120SWF Features Advanced Gen VII Technology Fast and Soft Recovery Maximum Junction Temperature 175C Low Forward Voltage: VF = 1.78 V (Typ.) @ IF = 60 A Easy to Parallel Operation Typical Applications Solar Energy Storage Industrial Motor Control MECHANICAL PARAMETERS Parameter Value Unit Die Size(w/ Scribe Lane) 3,200 x 7,360 mm2 Anode Pad Size 2,217 x 6,377 mm2 Scribe Lane Width 80 mm Die Thickness 119 mm Top Metal 6 mm AlSiCu Back Metal 1.65 mm Ti/NiV/Ag Topside Passivation Silicon Nitride plus Polyimide Wafer Diameter 200 mm Max Possible Die Per Wafer 1,049 Recommended Storage Environment In original container, in dry nitrogen, < 6 months at an ambient temperature of 23C Device Inking Shipping ORDERING INFORMATION PCFF60H120SWF Yes Sawn Wafer on Tape DIE OUTLINE VR = 1200 V IF = 60 A DIODE DIE C A |
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