BLV950 datasheet(4/16 Pages) PHILIPS

4 / 16 page

1997 Oct 27

Philips Semiconductors

Product speciﬁcation

UHF push-pull power transistor

BLV950

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. Measured under pulse conditions: tp ≤ 300 µs; δ≤ 0.01.

2. Value Cc is that of the die only, it is not measurable because of internal matching network.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor section

V(BR)CBO

collector-base breakdown voltage

open emitter; IC =60mA

−−

V(BR)CEO

collector-emitter breakdown voltage

open base; IC = 150 mA

−−

V(BR)EBO

emitter-base breakdown voltage

open collector; IE = 3 mA

−−

ICES

collector leakage current

VBE = 0; VCE =28V

−−

5mA

hFE

DC current gain

VCE = 10 V; IC = 4.5 A; note 1

−

120

collector capacitance

VCB = 26 V; IE =ie =0;

f = 1 MHz; note 2

−

Fig.2

DC current gain as a function of collector

current; typical values.

Measured under pulsed conditions; tp ≤ 300 µs; δ≤ 0.01.

(1) VCE =26V.

(2) VCE =10V.

handbook, halfpage

hFE

I C (A)

MLD256

(2)

(1)

Fig.3

Collector capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

200

100

300

010

(V)

MLD257

(pF)

Value Cc is that of the die only, it is not measurable because of

internal matching network.

IE =ie = 0; f = 1 MHz.

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