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BCV29 Datasheet(PDF) 4 Page - Nexperia B.V. All rights reserved |
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BCV29 Datasheet(HTML) 4 Page - Nexperia B.V. All rights reserved |
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4 / 8 page  2004 Dec 06 4 NXP Semiconductors Product data sheet NPN Darlington transistors BCV29; BCV49 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current BCV29 IE = 0 A; VCB = 30 V − − 100 nA BCV49 IE = 0 A; VCB = 60 V − − 100 nA IEBO emitter-base cut-off current IC = 0 A; VEB = 10 V − − 100 nA hFE DC current gain VCE = 5 V; see Fig.2 BCV29 IC = 1 mA 4000 − − IC = 10 mA 10000 − − IC = 100 mA 20000 − − IC = 500 mA 4000 − − DC current gain VCE = 5 V; see Fig.2 BCV49 IC = 1 mA 2000 − − IC = 10 mA 4000 − − IC = 100 mA 10000 − − IC = 500 mA 2000 − − VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA − − 1 V VBEsat base-emitter saturation voltage IC = 100 mA; IB = 0.1 mA − − 1.5 V VBEon base-emitter on-state voltage IC = 10 mA; VCE = 5 V − − 1.4 V fT transition frequency IC = 30 mA; VCE = 5 V; f = 100 MHz − 220 − MHz |
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