FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw

Ver : A

FKBA4113

P-Ch 40V Fast Switching MOSFETs

2

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-40

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.012

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-18A

---

---

40

m



VGS=-4.5V , ID=-12A

---

---

65

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

---

-2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

4.32

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-32V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=-32V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-18A

---

12.6

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

13

---



Qg

Total Gate Charge (-4.5V)

VDS=-20V , VGS=-4.5V , ID=-12A

---

9

---

nC

Qgs

Gate-Source Charge

---

2.54

---

Qgd

Gate-Drain Charge

---

3.1

---

Td(on)

Turn-On Delay Time

VDD=-15V , VGS=-10V , RG=3.3

,

ID=-1A

---

19.2

---

ns

Tr

Rise Time

---

12.8

---

Td(off)

Turn-Off Delay Time

---

48.6

---

Tf

Fall Time

---

4.6

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

1004

---

pF

Coss

Output Capacitance

---

108

---

Crss

Reverse Transfer Capacitance

---

80

---

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-27

A

ISM

Pulsed Source Current2,5

---

---

-54

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-29A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Diode Characteristics