BLW50F datasheet(4/12 Pages) PHILIPS

4 / 12 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW50F

CHARACTERISTICS

Tj =25 °C

Note

1. Measured under pulse conditions: tp ≤ 200 µs; δ≤ 0,02.

Collector-emitter breakdown voltage

VBE = 0; IC = 25 mA

V(BR) CES

110 V

Collector-emitter breakdown voltage

open base; IC = 100 mA

V(BR) CEO

55 V

Emitter-base breakdown voltage

open collector; IE = 10 mA

V(BR)EBO

Collector cut-off current

VBE = 0; VCE = 55 V

ICES

10 mA

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

ESBO

8mJ

RBE =10 Ω

ESBR

8mJ

D.C. current gain(1)

IC = 1,2 A; VCE =5 V

hFE

typ. 25

15 to 100

D.C. current gain ratio of matched devices(1)

IC = 1,2 A; VCE =5 V

hFE1/hFE2

1,2

Collector-emitter saturation voltage(1)

IC = 3,0 A; IB = 0,6 A

VCEsat

typ.

1,2 V

Transition frequency at f = 100 MHz(1)

−IE = 1,2 A; VCB = 45 V

typ.

490 MHz

−IE = 4,0 A; VCB = 45 V

typ.

540 MHz

Collector capacitance at f = 1 MHz

IE =Ie = 0; VCB = 45 V

typ.

53 pF

Feedback capacitance at f = 1 MHz

IC = 50 mA; VCE = 45 V

Cre

typ.

35 pF

Collector-ﬂange capacitance

Ccf

typ.

2 pF

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