August 1986

9

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW83

Fig.11 Intermodulation distortion as a function of

handbook, halfpage

020

40

−20

−40

−50

−30

MGP595

d3, d5

(dB)

d3

d5

P.E.P. (W)

Th =

90

°C

70

°C

50

°C

25

°C

Th =

90

°C

70

°C

50

°C

25

°C

Fig.12 Double-tone efficiency and power gain as a

function of output power.

handbook, halfpage

020

40

60

20

0

40

30

10

0

20

MGP596

ηdt

(%)

Gp

(dB)

Gp

ηdt

P.E.P. (W)

Figs 13 and 14 are typical curves and hold for an

unneutralized amplifier in s.s.b. class-AB operation.

Fig.13 Power gain as a function of frequency.

handbook, halfpage

MGP597

30

40

20

10

0

110

Gp

(dB)

f (MHz)

Ruggedness in s.s.b. operation

The BLW83 is capable of withstanding a load mismatch

(VSWR = 50) under the following conditions:

Fig.14 Input impedance (series components) as a

function of frequency.

handbook, halfpage

0

MGP598

110

10

15

5

20

ri

(

Ω)

ri

−12.5

−7.5

−5

−10

−2.5

xi

(

Ω)

f (MHz)

xi