BS107A datasheet(2/8 Pages) PHILIPS

2 / 8 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BS107A

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No second breakdown

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in TO-92

envelope and designed for use as line

current interrupter in telephone sets

and for application in relay,

high-speed and line-transformer

drivers.

PINNING - TO-92

source

gate

drain

QUICK REFERENCE DATA

Drain-source voltage

VDS

max.

200 V

Gate-source voltage (open drain)

± VGSO max.

20 V

Drain current (DC)

max.

250 mA

Total power dissipation up to Tcase =25 °CPtot

max.

0.6 W

Drain-source ON-resistance

typ.

max.

4.5

6.4

Ω

ID = 250 mA; VGS = 10 V

RDS(on)

Transfer admittance

min.

typ.

200

350

ID = 250 mA; VGS = 25 V

 Yfs

PIN CONFIGURATION

Fig.1 Simplified outline and symbol.

Note: Various pinnings are available.

handbook, halfpage

MSB033

handbook, 2 columns

MBB076 - 1

BS107A Datasheet(PDF) 2 Page - NXP Semiconductors

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