BSH105 datasheet(4/7 Pages) PHILIPS

4 / 7 page

Philips Semiconductors

Product specification

N-channel enhancement mode

BSH105

MOS transistor

Fig.7. Typical transfer characteristics.

D = f(VGS)

Fig.8. Typical transconductance, T

j = 25 ˚C.

fs = f(ID)

Fig.9. Normalised drain-source on-state resistance.

DS(ON)/RDS(ON)25 ˚C = f(Tj)

Fig.10. Gate threshold voltage.

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

D = f(VGS); conditions: Tj = 25 ˚C

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

BSH105

0.5

1.5

2.5

0.5

1.5

2.5

Gate-Source Voltage, VGS (V)

VDS > ID X RDS(on)

Tj = 25 C

150 C

Drain Current, ID (A)

Threshold Voltage, VGS(to), (V)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

100

125

150

Junction Temperature, Tj (C)

minimum

typical

BSH105

0.5

1.5

2.5

3.5

0.5

1.5

2.5

Drain Current, ID (A)

Transconductance, gfs (S)

BSH105

1E-07

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

0.2

0.4

0.6

0.8

Gate-Source Voltage, VGS (V)

Drain Current, ID (A)

VDS = 5 V

Tj = 25 C

Normalised Drain-Source On Resistance

0.8

0.9

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

100

125

150

Junction Temperature, Tj (C)

VGS = 4.5 V

2.5 V

1.8 V

RDS(ON) @ Tj

RDS(ON) @ 25C

BSH105

100

1000

0.1

100

Drain-Source Voltage, VDS (V)

Capacitances, Ciss, Coss, Crss (pF)

Ciss

Coss

Crss

August 1998

Rev 1.000

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