BSH106 datasheet(2/7 Pages) PHILIPS

2 / 7 page

Philips Semiconductors

Product specification

N-channel enhancement mode

BSH106

MOS transistor

ELECTRICAL CHARACTERISTICS

j= 25˚C

unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

(BR)DSS

Drain-source breakdown

GS = 0 V; ID = 10 µA20

voltage

GS(TO)

Gate threshold voltage

DS = VGS; ID = 1 mA

0.4

0.57

j = 150˚C

0.1

DS(ON)

Drain-source on-state

GS = 4.5 V; ID = 0.6 A

140

200

Ω

resistance

GS = 2.5 V; ID = 0.6 A

180

250

Ω

GS = 1.8 V; ID = 0.3 A

240

300

Ω

GS = 2.5 V; ID = 0.6 A; Tj = 150˚C

270

375

Ω

Forward transconductance

DS = 16 V; ID = 0.6 A

0.5

1.6

GSS

Gate source leakage current V

GS = ±8 V; VDS = 0 V

100

DSS

Zero gate voltage drain

DS = 16 V; VGS = 0 V;

100

current

j = 150˚C

1.3

µA

g(tot)

Total gate charge

D = 1 A; VDD = 20 V; VGS = 4.5 V

3.9

Gate-source charge

0.4

Gate-drain (Miller) charge

1.4

d on

Turn-on delay time

DD = 20 V; ID = 1 A;

Turn-on rise time

GS = 8 V; RG = 6 Ω

4.5

d off

Turn-off delay time

Resistive load

Turn-off fall time

iss

Input capacitance

GS = 0 V; VDS = 16 V; f = 1 MHz

152

oss

Output capacitance

rss

Feedback capacitance

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

j = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Continuous reverse drain

a = 25 ˚C

1.05

current

DRM

Pulsed reverse drain current

4.2

Diode forward voltage

F = 0.5 A; VGS = 0 V

0.74

Reverse recovery time

F = 0.5 A; -dIF/dt = 100 A/µs;

Reverse recovery charge

GS = 0 V; VR = 16 V

August 1998

Rev 1.000

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