3

µµµµPA831TF

(2) Q2

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

CONDITION

MIN.

TYP.

MAX.

UNIT

Collector cutoff current

ICBO

VCB = 10 V, IE = 0

0.8

µA

Emitter cutoff current

IEBO

VEB = 1 V, IC = 0

0.8

µA

DC current gain

hFE

VCE = 3 V, IC = 7 mA

Note 1

70

150

Gain bandwidth product

fT

VCE = 3 V, IC = 7 mA, f = 1 GHz

4.5

7.0

GHz

Feedback capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHz

Note 2

0.45

0.9

pF

Insertion power gain

|S21e|2

VCE = 3 V, IC = 7 mA, f = 1 GHz

10

12

dB

Noise figure

NF

VCE = 3 V, IC = 7 mA, f = 1 GHz

1.4

2.7

dB

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty cycle ≤ 2%

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank

FB

Marking

V24

hFE value of Q1

100 to 145

hFE value of Q2

70 to 150