DATA SHEET

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NPN SILICON RF TWIN TRANSISTOR

µµµµPA861TD

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

Document No. PU10057EJ02V0DS (2nd edition)

Date Published February 2002 CP(K)

Printed in Japan

©

©

©

© NEC Compound Semiconductor Devices 2001, 2002

The mark

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• shows major revised points.

FEATURES

• Low voltage operation

• 2 different built-in transistors (2SC5436, 2SC5786)

Q1: High-gain transistor

fT = 12.0 GHz TYP.,

S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz

Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications

fT = 20.0 GHz TYP.,

S21e2 = 13.0 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz

NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt

• 6-pin lead-less minimold package

BUILT-IN TRANSISTORS

Q1

Q2

3-pin thin-type ultra super minimold part No.

2SC5436

2SC5786

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

µPA861TD

50 pcs (Non reel)

• 8 mm wide embossed taping

µPA861TD-T3

10 kpcs/reel

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.