Data Sheet PU10423EJ02V0DS

3

µPA867TS

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

(1) Q1

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

−

100

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

−

100

nA

DC Current Gain

hFE

Note 1

VCE = 3 V, IC = 10 mA

75

110

150

−

Gain Bandwidth Product

fT

VCE = 3 V, IC = 10 mA, f = 2 GHz

10.0

12.0

−

GHz

Insertion Power Gain

S21e2 VCE = 3 V, IC = 10 mA, f = 2 GHz

7.0

11.0

−

dB

Noise Figure

NF

VCE = 3 V, IC = 3 mA, f = 2 GHz,

ZS = Zopt

−

1.5

2.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 3 V, IE = 0 mA, f = 1 MHz

−

0.4

0.7

pF

(2) Q2

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

−

100

nA

Emitter Cut-off Current

IEBO

VEB = 0.5 V, IC = 0 mA

−

−

100

nA

DC Current Gain

hFE

Note 1

VCE = 1 V, IC = 5 mA

140

180

220

−

Gain Bandwidth Product (1)

fT

VCE = 1 V, IC = 5 mA, f = 2 GHz

7.0

10.0

−

GHz

Gain Bandwidth Product (2)

fT

VCE = 1 V, IC = 20 mA, f = 2 GHz

−

17.0

−

GHz

Insertion Power Gain (1)

S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz

7.5

9.0

−

dB

Insertion Power Gain (2)

S21e2 VCE = 1 V, IC = 20 mA, f = 2 GHz

−

10.0

−

dB

Associated Gain

Ga

VCE = 1 V, IC = 5 mA, f = 2 GHz,

ZS = Zopt

7.0

10.0

−

dB

Noise Figure

NF

VCE = 1 V, IC = 5 mA, f = 2 GHz,

ZS = Zopt

−

0.9

1.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 1 V, IE = 0 mA, f = 1 MHz

−

0.5

0.7

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

FB

Marking

xF

hFE Value of Q1

75 to 150

hFE Value of Q2

140 to 220