DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

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this is the latest version.

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representative for availability and additional information.

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG)

Document No. PU10424EJ02V0DS (2nd edition)

Date Published September 2005 CP(K)

Printed in Japan

NPN SILICON + SiGe RF TWIN TRANSISTOR

µPA868TS

 NEC Compound Semiconductor Devices, Ltd. 2003, 2005

The mark

shows major revised points.

FEATURES

• 2 different built-in transistors (2SC5436, NESG2107M33)

Q1: High gain transistor

fT = 12 GHz TYP.,

S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz

Q2: Built-in low phase noise SiGe transistor suited for OSC applications

fT = 10.0 GHz TYP.,

S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

• 6-pin super lead-less minimold package (1007 PKG)

BUILT-IN TRANSISTORS

Q1

Q2

Flat-lead 3-pin thin-type ultra super minimold part No.

2SC5436

−

3-pin super lead-less minimold part No.

−

NESG2107M33

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

µPA868TS

µPA868TS-A

50 pcs

(Non reel)

µPA868TS-T3

µPA868TS-T3-A

6-pin super lead-less

minimold package

(1007 PKG) (Pb-Free)

Note

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the

perforation side of the tape

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.