Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TWIN TRANSISTOR

µµµµPA873TC

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

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 NEC Compound Semiconductor Devices 2002

Document No. PU10166EJ01V0DS (1st edition)

Date Published June 2002 CP(K)

Printed in Japan

DATA SHEET

FEATURES

• Low phase distortion transistor suited for OSC applications

fT = 4.5 GHz TYP.,

S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

• Built-in 2 transistors (2

× 2SC5800)

• Flat-lead 6-pin thin-type ultra super minimold package

BUILT-IN TRANSISTORS

Q1, Q2

3-pin thin-type ultra super minimold part No.

2SC5800

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

µPA873TC

50 pcs (Non reel)

• 8 mm wide embossed taping

µPA873TC-T1

3 kpcs/reel

• Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)

face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.