DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15570EJ1V0DS00 (1st edition)

Date Published June 2001 NS CP(K)

Printed in Japan

©

2001

NPN SILICON RF TWIN TRANSISTOR

µµµµPA891TC

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUMER MINIMOLD

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

FEATURES

• Built-in low phase distortion transistor suited for OSC operation

fT = 5.0 GHz TYP.,

S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

• Built-in 2 transistors (2

× 2SC5600)

• Flat-lead 6-pin thin-type ultra super minimold package

BUILT-IN TRANSISTORS

Q1, Q2

3-pin thin-type ultra super minimold part No.

2SC5600

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

µPA891TC

50 pcs (Non reel)

• 8 mm wide embossed taping

µPA891TC-T1

3 kpcs/reel

• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)

face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

9V

Collector to Emitter Voltage

VCEO

5.5

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

100

mA

Total Power Dissipation

Ptot

Note

200 in 1 element

230 in 2 elements

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy substrate